IPP093N06N3GHKSA1

new-10%

Manufacturer part number:IPP093N06N3GHKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 50A TO220-3

Case Package:SOT-23

Datasheet:IPP093N06N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	71W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 34μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 30V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	60V
RoHS Status	RoHS Compliant