IPP100N06S3L-04

new-10%

Manufacturer part number:IPP100N06S3L-04

Manufacturer:Infineon Technologies

Description:MOSFET OptiMOS -T2 PWR TRAN 55V 100A

Case Package:SOT-23

Datasheet:IPP100N06S3L-04 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	100A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	17270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	362nC @ 10V
Rise Time	58ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0062Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free