FQB2P25TM

new-10%

Manufacturer part number:FQB2P25TM

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 250V 2.3A D2PAK

Case Package:SOT-23

Datasheet:FQB2P25TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-250V
Technology	MOSFET (Metal Oxide)
Current Rating	-2.3A
Power Dissipation-Max	3.13W Ta 52W Tc
Element Configuration	Single
Power Dissipation	3.13W
Turn On Delay Time	8.5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	4Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.3A Tc
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-250V
Input Capacitance	250pF
Drain to Source Resistance	3.15Ohm
Rds On Max	4 Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free