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IPP12CN10NGXKSA1

IPP12CN10NGXKSA1

IPP12CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 67A TO-220

SOT-23

IPP12CN10NGXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature FAST SWITCHING
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code unknown
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.9m Ω @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 67A
Drain-source On Resistance-Max 0.0129Ohm
Pulsed Drain Current-Max (IDM) 268A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 154 mJ

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