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SI4410DYPBF

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

SI4410DYPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SI4410DYPBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.0135Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 400 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,800 $0.44372 $1.33116
SI4410DYPBF Product Details

SI4410DYPBF Description


The cutting-edge HEXFET power MOSFET technology used by International Rectifier to create this N-channel HEXFET Power MOSFET. This technology's low onresistance and low gate charge make it the perfect choice for low voltage or battery-powered power conversion applications.

The increased thermal properties of the SO-8 package with copper leadframe enable power dissipation of more than 800mW in typical board mount applications.



SI4410DYPBF Features


  • N-Channel MOSFET

  • Low On-Resistance

  • Low Gate Charge

  • Surface Mount

  • Logic Level Drive

  • Lead-Free



SI4410DYPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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