SI4410DYPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
SI4410DYPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1585pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
10A
Drain-source On Resistance-Max
0.0135Ohm
Pulsed Drain Current-Max (IDM)
50A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
400 mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,800
$0.44372
$1.33116
SI4410DYPBF Product Details
SI4410DYPBF Description
The cutting-edge HEXFET power MOSFET technology used by International Rectifier to create this N-channel HEXFET Power MOSFET. This technology's low onresistance and low gate charge make it the perfect choice for low voltage or battery-powered power conversion applications.
The increased thermal properties of the SO-8 package with copper leadframe enable power dissipation of more than 800mW in typical board mount applications.