IPP60R099C6XKSA1

new-10%

Manufacturer part number:IPP60R099C6XKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:IPP60R099C6XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	40 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	278W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	278W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	99m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.21mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C	37.9A Tc
Gate Charge (Qg) (Max) @ Vgs	119nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	37.9A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.099Ohm
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	796 mJ
Max Junction Temperature (Tj)	150°C
Height	20.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free