Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXFH7N100P

IXFH7N100P

IXFH7N100P

IXYS

MOSFET N-CH

SOT-23

IXFH7N100P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2012
Series HiPerFET™, Polar™
Part StatusActive
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 7A
In-Stock:850 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.038277$1.038277
10$0.979506$9.79506
100$0.924062$92.4062
500$0.871757$435.8785
1000$0.822412$822.412

About IXFH7N100P

The IXFH7N100P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFH7N100P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News