IXFH7N100P

new-10%

Manufacturer part number:IXFH7N100P

Manufacturer:IXYS

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:IXFH7N100P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	HiPerFET™, Polar™
Part Status	Active
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Configuration	Single
Power Dissipation-Max	300W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.9 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2590pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	7A