IPP60R520E6XKSA1

new-10%

Manufacturer part number:IPP60R520E6XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 8.1A TO220

Case Package:SOT-23

Datasheet:IPP60R520E6XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	66W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	66W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	520m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 230μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	512pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.1A Tc
Gate Charge (Qg) (Max) @ Vgs	23.4nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	8.1A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	22A
Height	15.95mm
Length	10.36mm
Width	4.57mm
Radiation Hardening	No
RoHS Status	RoHS Compliant