IXFN360N10T

new-10%

Manufacturer part number:IXFN360N10T

Manufacturer:IXYS

Description:Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

Case Package:SOT-23

Datasheet:IXFN360N10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	2.6MOhm
Terminal Finish	NICKEL
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	360A Tc
Gate Charge (Qg) (Max) @ Vgs	505nC @ 10V
Rise Time	100ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	160 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	360A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	900A
Avalanche Energy Rating (Eas)	2000 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free