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IPP65R190C7FKSA1

  • IPP65R190C7FKSA1
  • IPP65R190C7FKSA1

IPP65R190C7FKSA1

IPP65R190C7FKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 190mOhm @ 5.7A, 10V ±20V 1150pF @ 400V 23nC @ 10V 650V TO-220-3

SOT-23

IPP65R190C7FKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C7
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 72W Tc
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 400V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Input Capacitance 1.15nF
Drain to Source Resistance 168mOhm
Rds On Max 190 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.35000 $3.35
50 $2.70500 $135.25
100 $2.43440 $243.44
500 $1.89344 $946.72
IPP65R190C7FKSA1 Product Details

IPP65R190C7FKSA1 Description

The IPP65R190C7FKSA1 is a 650V CoolMOS? C7 N-channel Power MOSFET that features a lower gate charge. According to the super-junction (SJ) concept, and invented by Infineon Technologies, this CoolMOSTM technology for high voltage IPP65R190C7FKSA1 power MOSFETs is innovative. The CoolMOSTM C7 blends high-caliber innovation with the expertise of the top SJ MOSFET provider. IPP65R190C7FKSA1 offers all the advantages of fast switching super-junction MOSFETs, including increased reliability, easier implementation, lower gate charge, and improved efficiency.


IPP65R190C7FKSA1 Features

  • IncreasedMOSFETdv/dtruggedness

  • BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg

  • BestinclassRDS(on)/package

  • Easytouse/drive

  • Pb-freeplating,halogenfreemoldcompound

  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)


IPP65R190C7FKSA1 Applications

  • PFC stages and hard switching PWM stages for Computing

  • Industrial

  • Power Management

  • Alternative Energy

  • Communications & Networking


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