IPP65R190CFDAAKSA1

new-10%

Manufacturer part number:IPP65R190CFDAAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V TO-220-3

Case Package:SOT-23

Datasheet:IPP65R190CFDAAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2012
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	151W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 700μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1850pF @ 100V
Current - Continuous Drain (Id) @ 25°C	17.5A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	17.5A
JEDEC-95 Code	TO-220AB
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.19Ohm
Pulsed Drain Current-Max (IDM)	57.2A
Avalanche Energy Rating (Eas)	484 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead