SI4892DY-T1-E3

new-10%

Manufacturer part number:SI4892DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 8.8A 8-SOIC

Case Package:SOT-23

Datasheet:SI4892DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	12mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Power Dissipation	1.6W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	8.8A Ta
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	12mOhm
Rds On Max	12 mΩ
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free