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IPSH6N03LB G

IPSH6N03LB G

IPSH6N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A IPAK

SOT-23

IPSH6N03LB G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Supplier Device Package PG-TO251-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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