IPT012N06NATMA1

new-10%

Manufacturer part number:IPT012N06NATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 240A HSOF-8

Case Package:SOT-23

Datasheet:IPT012N06NATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-F2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.3V @ 143μA
Input Capacitance (Ciss) (Max) @ Vds	9750pF @ 30V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	41A
Drain-source On Resistance-Max	0.0012Ohm
Pulsed Drain Current-Max (IDM)	960A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	420 mJ
RoHS Status	ROHS3 Compliant