FDMS3572

new-10%

FDMS3572

Manufacturer part number:FDMS3572

Manufacturer:ON Semiconductor

Description:FDMS3572 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS3572 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	210mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	UltraFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	FET General Purpose Power
Voltage - Rated DC	80V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	22A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.5W Ta 78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16.5m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2490pF @ 40V
Current - Continuous Drain (Id) @ 25°C	8.8A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	8.8A
Threshold Voltage	3.2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.029Ohm
Drain to Source Breakdown Voltage	80V
Pulsed Drain Current-Max (IDM)	50A
Height	750μm
Length	5mm
Width	6mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free