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IPW50R350CPFKSA1

IPW50R350CPFKSA1

IPW50R350CPFKSA1

Infineon Technologies

MOSFET N-CH 550V 10A TO247-3

SOT-23

IPW50R350CPFKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 89W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370μA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AD
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.35Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 246 mJ
RoHS Status RoHS Compliant

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