Welcome to Hotenda.com Online Store!

logo
userjoin
Home

RYE002N05TCL

RYE002N05TCL

RYE002N05TCL

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.2 Ω @ 200mA, 4.5V ±8V 26pF @ 10V 50V SC-75, SOT-416

SOT-23

RYE002N05TCL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 0.9V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.8Ohm
DS Breakdown Voltage-Min 50V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.089855 $0.089855
500 $0.066070 $33.035
1000 $0.055058 $55.058
2000 $0.050512 $101.024
5000 $0.047207 $236.035
10000 $0.043914 $439.14
15000 $0.042470 $637.05
50000 $0.041761 $2088.05
RYE002N05TCL Product Details

RYE002N05TCL Overview


A device's maximum input capacitance is 26pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 50V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (0.9V 4.5V) to reduce its overall power consumption.

RYE002N05TCL Features


a continuous drain current (ID) of 200mA
a 50V drain to source voltage (Vdss)


RYE002N05TCL Applications


There are a lot of ROHM Semiconductor
RYE002N05TCL applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News