PSMN2R2-40BS,118

new-10%

Manufacturer part number:PSMN2R2-40BS,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 40V 100A D2PAK

Case Package:SOT-23

Datasheet:PSMN2R2-40BS,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	306W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	306W
Case Connection	DRAIN
Turn On Delay Time	33.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8423pF @ 20V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	40.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25.2 ns
Turn-Off Delay Time	66.6 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0022Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	962A
Avalanche Energy Rating (Eas)	1.24 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant