IR2110SPBF Description

The IR2110SPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The IGBT driver IR2110SPBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

IR2110SPBF Features

• Floating channel designed for bootstrap operation

• Fully operational to +500 V

• Fully operational to +600 V version available (IR2113S)

• dV/dt immune

• Gate drive supply range from 10 to 20 V

• Undervoltage lockout for both channels

• 3.3 V logic compatible

• Separate logic supply range from 3.3 V to 20 V

• Logic and power ground + /- 5 V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

IR2110SPBF Applications

• micro-inverter 

• power optimizer

• string inverter 

• central inverter 

• residential, small and large commercial, and utility-scale deployments.