IR2110STRPBF Description

The IR2110STRPBF is a power MOSFET and IGBT drivers with distinct high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Down to 3.3V logic, logic inputs are compatible with typical CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET or IGBT with a voltage range of 500 to 600 volts.

IR2110STRPBF Features

• Outputs in phase with inputs

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• CMOS Schmitt-triggered inputs with pull-down

• 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune

IR2110STRPBF Applications

• Industrial