IR2111S Description

The IR2111(S) is a high-voltage, high-speed power MOSFET and IGBT driver for halfbridge applications with dependent high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Standard CMOS outputs are compatible with logic input. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. To prevent shoot-through in the output half-bridge, internal deadtime is given. The floating channel can be utilized to drive a 600-volt N-channel power MOSFET or IGBT in a high-side setup.

IR2111S Features


? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High side output in phase with input
? Also available LEAD-FREE


IR2111S Applications


? Consumer
? Industrial heating and welding
? Motor control and drives
? Power Management (SMPS) - Reference Design
? Robotics