IRF100P218XKMA1

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IRF100P218XKMA1

Manufacturer part number:IRF100P218XKMA1

Manufacturer:Infineon Technologies

Description:IRF100P218XKMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF100P218XKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	StrongIRFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	556W Tc
Power Dissipation	3.8W
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.28m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 278μA
Input Capacitance (Ciss) (Max) @ Vds	25000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	209A Tc
Gate Charge (Qg) (Max) @ Vgs	555nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	170 ns
Continuous Drain Current (ID)	209A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	175°C
Height	24.99mm
RoHS Status	ROHS3 Compliant