SI4682DY-T1-E3

new-10%

Manufacturer part number:SI4682DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 16A 8-SOIC

Case Package:SOT-23

Datasheet:SI4682DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta 4.45W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1595pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.595nF
Drain to Source Resistance	9.4mOhm
Rds On Max	9.4 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant