IRF1312PBF

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IRF1312PBF

Manufacturer part number:IRF1312PBF

Manufacturer:Infineon Technologies

Description:IRF1312PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF1312PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	10Ohm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	80V
Technology	MOSFET (Metal Oxide)
Current Rating	95A
Number of Elements	1
Power Dissipation-Max	3.8W Ta 210W Tc
Element Configuration	Single
Power Dissipation	210W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	95A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	51ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	51 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	95A
Threshold Voltage	5.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Dual Supply Voltage	80V
Input Capacitance	5.45nF
Rds On Max	10 mΩ
Nominal Vgs	5.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free