SI6459BDQ-T1-GE3

new-10%

Manufacturer part number:SI6459BDQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 2.7A 1.5W 115mohm @ 10V

Case Package:SOT-23

Datasheet:SI6459BDQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Power Dissipation	1W
Turn On Delay Time	10 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-2.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	115mOhm
Rds On Max	115 mΩ
Height	1mm
Length	3mm
Width	4.4mm
RoHS Status	ROHS3 Compliant