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IRF1324STRLPBF

IRF1324STRLPBF

IRF1324STRLPBF

Infineon Technologies

MOSFET N-CH 24V 195A D2PAK

SOT-23

IRF1324STRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.65mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Input Capacitance 7.59nF
Rds On Max 1.65 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant

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