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IRLR014NPBF

IRLR014NPBF

IRLR014NPBF

Infineon Technologies

IRLR014NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR014NPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 140mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Power Dissipation-Max 28W Tc
Element Configuration Single
Power Dissipation 28W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Input Capacitance 265pF
Drain to Source Resistance 140mOhm
Rds On Max 140 mΩ
Nominal Vgs 1 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.146261 $0.146261
10 $0.137981 $1.37981
100 $0.130172 $13.0172
500 $0.122803 $61.4015
1000 $0.115852 $115.852
IRLR014NPBF Product Details

IRLR014NPBF Description


IRLR014NPBF is a 55v HEXFET? Power MOSFET. The Fifth Generation HEXFET IRLR014NPBF from International Rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.



IRLR014NPBF Features


  • Logic-Level Gate Drive

  • Surface Mount (IRLR024N)

  • Straight Lead (IRLU024N)

  • Advanced Process Technology

  • Fast Switching

  • Fully Avalanche Rated



IRLR014NPBF Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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