IRF1404SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF1404SPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
162A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.8W Ta 200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C
162A Tc
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Rise Time
140ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
162A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
650A
Dual Supply Voltage
40V
Recovery Time
110 ns
Nominal Vgs
4 V
Height
4.83mm
Length
10.67mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
250
$2.56596
$641.49
IRF1404SPBF Product Details
IRF1404SPBF Description
The IRF1404SPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.