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IRF1404SPBF

IRF1404SPBF

IRF1404SPBF

Infineon Technologies

IRF1404SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF1404SPBF Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 162A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 162A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 162A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 650A
Dual Supply Voltage 40V
Recovery Time 110 ns
Nominal Vgs 4 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $2.56596 $641.49
IRF1404SPBF Product Details

IRF1404SPBF Description


The IRF1404SPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.



IRF1404SPBF Features


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRF1404SPBF Applications


  • DC motor drive

  • High efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High speed power switching

  • Hard switched and high frequency circuits


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