SUP85N10-10P-GE3

new-10%

Manufacturer part number:SUP85N10-10P-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 85A TO220AB

Case Package:SOT-23

Datasheet:SUP85N10-10P-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.75W Ta 227W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.75W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 50V
Current - Continuous Drain (Id) @ 25°C	85A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	85A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	240A
Nominal Vgs	3 V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant