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IRF1902TRPBF

IRF1902TRPBF

IRF1902TRPBF

Infineon Technologies

MOSFET N-CH 20V 4.2A 8-SOIC

SOT-23

IRF1902TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 310pF
Drain to Source Resistance 85mOhm
Rds On Max 85 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.140720 $11.14072
10 $10.510113 $105.10113
100 $9.915201 $991.5201
500 $9.353963 $4676.9815
1000 $8.824494 $8824.494

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