STF5N52U

new-10%

Manufacturer part number:STF5N52U

Manufacturer:STMicroelectronics

Description:STF5N52U datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STF5N52U Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UltraFASTmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Base Part Number	STF5N
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	ISOLATED
Turn On Delay Time	11.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.4A Tc
Gate Charge (Qg) (Max) @ Vgs	16.9nC @ 10V
Rise Time	13.6ns
Drain to Source Voltage (Vdss)	525V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	23.1 ns
Continuous Drain Current (ID)	4.4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
DS Breakdown Voltage-Min	525V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant