IRF200P222

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IRF200P222

Manufacturer part number:IRF200P222

Manufacturer:Infineon Technologies

Description:IRF200P222 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF200P222 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	StrongIRFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	556W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	556W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.6m Ω @ 82A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	9820pF @ 50V
Current - Continuous Drain (Id) @ 25°C	182A Tc
Gate Charge (Qg) (Max) @ Vgs	203nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	182A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0066Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	728A
Max Junction Temperature (Tj)	175°C
Height	24.99mm
RoHS Status	ROHS3 Compliant