IRF3305PBF

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IRF3305PBF

Manufacturer part number:IRF3305PBF

Manufacturer:Infineon Technologies

Description:IRF3305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF3305PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	75A
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	88ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	75A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	560A
Avalanche Energy Rating (Eas)	860 mJ
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free