IRF3704ZSPBF

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IRF3704ZSPBF

Manufacturer part number:IRF3704ZSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 67A D2PAK

Case Package:SOT-23

Datasheet:IRF3704ZSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	7.9MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	67A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	57W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
Turn On Delay Time	8.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.9m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	38ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.2 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	67A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	260A
Recovery Time	17 ns
Nominal Vgs	2.1 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free