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IRF3708S

IRF3708S

IRF3708S

Infineon Technologies

IRF3708S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3708S Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 87W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
RoHS Status Non-RoHS Compliant
IRF3708S Product Details

IRF3708S Description


IRF3708S is a 30v HEXFET? Power MOSFET manufactured by Infineon. The Infineon MOSFET IRF3708S can be used for High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use and High-Frequency Buck Converters for Computer Processor Power due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRF3708S is in the D2Pak package with 87W power dissipation. 



IRF3708S Features


  • Ultra-Low Gate Impedance

  • Very Low RDS(on) at 4.5V VGS

  • Fully Characterized Avalanche Voltage and Current

  • Drain-Source Voltage: 30V

  • Gate-to-Source Voltage: ±12V



IRF3708S Applications


  • Lighting

  • Computation and communication

  • Electromechanical systems

  • Renewable generation

  • High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use

  • High-Frequency Buck Converters for Computer Processor Power


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