IRF3708S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF3708S Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
87W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2417pF @ 15V
Current - Continuous Drain (Id) @ 25°C
62A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.8V 10V
Vgs (Max)
±12V
RoHS Status
Non-RoHS Compliant
IRF3708S Product Details
IRF3708S Description
IRF3708S is a 30v HEXFET? Power MOSFET manufactured by Infineon. The Infineon MOSFET IRF3708S can be used for High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use and High-Frequency Buck Converters for Computer Processor Power due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRF3708S is in the D2Pak package with 87W power dissipation.
IRF3708S Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Drain-Source Voltage: 30V
Gate-to-Source Voltage: ±12V
IRF3708S Applications
Lighting
Computation and communication
Electromechanical systems
Renewable generation
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
High-Frequency Buck Converters for Computer Processor Power