IRF3709ZSPBF

new-10%

IRF3709ZSPBF

Manufacturer part number:IRF3709ZSPBF

Manufacturer:Infineon Technologies

Description:IRF3709ZSPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF3709ZSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	6.3MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	87A
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Power Dissipation	79mW
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C	87A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Rise Time	41ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.7 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	87A
Threshold Voltage	2.25V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	2.13nF
Recovery Time	24 ns
Drain to Source Resistance	6.3mOhm
Rds On Max	6.3 mΩ
Nominal Vgs	2.25 V
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free