IRFD9014

new-10%

Manufacturer part number:IRFD9014

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 60V 1.1A 4-DIP

Case Package:SOT-23

Datasheet:IRFD9014 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Current Rating	-1.1A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Power Dissipation	1.3W
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	500mOhm @ 660mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	63ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	-1.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	270pF
Drain to Source Resistance	500mOhm
Rds On Max	500 mΩ
Height	3.37mm
Length	5mm
Width	6.29mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead