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IRF3711LPBF

IRF3711LPBF

IRF3711LPBF

Infineon Technologies

MOSFET N-CH 20V 110A TO-262

SOT-23

IRF3711LPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 110A
Power Dissipation-Max 3.1W Ta 120W Tc
Power Dissipation 120W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 220ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.528898 $0.528898
10 $0.498960 $4.9896
100 $0.470717 $47.0717
500 $0.444073 $222.0365
1000 $0.418936 $418.936

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