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2SK2221-E

2SK2221-E

2SK2221-E

Renesas Electronics America

MOSFET N-CH 200V 8A TO-3P

SOT-23

2SK2221-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Copper, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 8A
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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