IRF4905LPBF

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IRF4905LPBF

Manufacturer part number:IRF4905LPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) P-Channel Tube 20m Ω @ 42A, 10V ±20V 3500pF @ 25V 180nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

Case Package:SOT-23

Datasheet:IRF4905LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HEXFET®
Published	1997
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	HIGH RELIABILITY, AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	-74A
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	99ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	64 ns
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	-74A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42A
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	-55V
Pulsed Drain Current-Max (IDM)	280A
Dual Supply Voltage	55V
Nominal Vgs	4 V
Height	9.652mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free