IXFN210N30P3

new-10%

Manufacturer part number:IXFN210N30P3

Manufacturer:IXYS

Description:MOSFET N-Channel: Power MOSFET w/Fast Diode

Case Package:SOT-23

Datasheet:IXFN210N30P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Panel
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5kW
Turn On Delay Time	46 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	16200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	192A Tc
Gate Charge (Qg) (Max) @ Vgs	268nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	192A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	300V
Height	9.6mm
Length	38.23mm
Width	25.07mm
RoHS Status	ROHS3 Compliant