IRF540NSTRLPBF

new-10%

IRF540NSTRLPBF

Manufacturer part number:IRF540NSTRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 33A D2PAK

Case Package:SOT-23

Datasheet:IRF540NSTRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	44MOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	33A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	130W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	130W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Recovery Time	170 ns
Nominal Vgs	4 V
Height	4.826mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free