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STW58N60DM2AG

  • STW58N60DM2AG
  • STW58N60DM2AG

STW58N60DM2AG

STW58N60DM2AG

STMicroelectronics

STW58N60DM2AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW58N60DM2AG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, MDmesh™ DM2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW58N
Power Dissipation-Max 360W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 50A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.76000 $11.76
30 $9.78000 $293.4
120 $8.90000 $1068
510 $7.58000 $3865.8
1,020 $6.70000 $6.7
STW58N60DM2AG Product Details
STW58N60DM2AG Discription

This high voltage N-channel power MOSFET is part of a series of MDMesh DM2 fast recovery diodes. With extremely low recovery charge (QRR) and recovery time (TRR) and low RDS (conduction), it is suitable for the most demanding high efficiency converters and is ideal for bridge topologies and ZVS phase shifters.

STW58N60DM2AG Feature:
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected

STW58N60DM2AG Application:
? Switching applications

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