IRF540ZS Description
The IRF540ZS is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features a 175??C junctions operating temperature, fast switching speed, and improved repetitive avalanche rating. This combination makes the IRF540ZS an extremely efficient and reliable choice for use in a wide variety of applications.
IRF540ZS Features
Advanced Process Technology
Ultra Low On-Resistance
175??C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-free
IRF540ZS Applications