IRF60R217

new-10%

Manufacturer part number:IRF60R217

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.9m Ω @ 35A, 10V ±20V 2170pF @ 25V 66nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:IRF60R217 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	StrongIRFET™
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.9m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	3.7V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2170pF @ 25V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	58A
JEDEC-95 Code	TO-252AA
Drain-source On Resistance-Max	0.0099Ohm
Pulsed Drain Current-Max (IDM)	217A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	124 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free