IRF6216PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF6216PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
240m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1280pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.2A Ta
Gate Charge (Qg) (Max) @ Vgs
49nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
IRF6216PBF Product Details
IRF6216PBF Description
The IRF6216PBF is a HEXFET? single P-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses and fully characterized avalanche voltage and current. The Infineon IRF6216PBF is suitable for reset switches for active clamp reset DC-to-DC converters.
IRF6216PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design