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IRF6216PBF

  • IRF6216PBF
  • IRF6216PBF

IRF6216PBF

IRF6216PBF

Infineon Technologies

IRF6216PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF6216PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 240m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
IRF6216PBF Product Details

IRF6216PBF Description


The IRF6216PBF is a HEXFET? single P-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses and fully characterized avalanche voltage and current. The Infineon IRF6216PBF is suitable for reset switches for active clamp reset DC-to-DC converters.



IRF6216PBF Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design 

  • Fully Characterized Avalanche Voltage and Current

  • Fast switching

  • Dynamic dV/dt rating



IRF6216PBF Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


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