RQ3P300BETB1

new-10%

Manufacturer part number:RQ3P300BETB1

Manufacturer:ROHM Semiconductor

Description:RQ3P300BE IS A POWER MOSFET WITH

Case Package:SOT-23

Datasheet:RQ3P300BETB1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta 32W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 50V
Current - Continuous Drain (Id) @ 25°C	10A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs	19.1nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	36A
Drain-source On Resistance-Max	0.021Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	39 mJ
RoHS Status	ROHS3 Compliant