IRF630NLPBF

new-10%

Manufacturer part number:IRF630NLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 9.3A TO-262

Case Package:SOT-23

Datasheet:IRF630NLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	300mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	9A
Number of Elements	1
Power Dissipation-Max	82W Tc
Element Configuration	Single
Power Dissipation	82W
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.3A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	575pF
Drain to Source Resistance	300mOhm
Rds On Max	300 mΩ
Height	9.65mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free