IRF6609 Description

The IRF6609 combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a SO-8-sized footprint and a 0.7 mm profile that offers the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling to increase thermal transfer in power systems, improving the best thermal resistance by 80% over the prior model.

IRF6609 Features

• Low Conduction Losses

• Low Switching Losses

• Ideal Synchronous Rectifier MOSFET

• Low Profile (<0.7 mm)

• Dual Sided Cooling Compatible

• Compatible with existing Surface Mount

• Techniques

IRF6609 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial