IRF6609TR1PBF

new-10%

Manufacturer part number:IRF6609TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 31A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6609TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	5
Supplier Device Package	DIRECTFET™ MT
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	2MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	31A
Number of Elements	1
Power Dissipation-Max	1.8W Ta 89W Tc
Power Dissipation	1.8W
Turn On Delay Time	24 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6290pF @ 10V
Current - Continuous Drain (Id) @ 25°C	31A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 4.5V
Rise Time	95ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.8 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	25A
Threshold Voltage	1.55V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Input Capacitance	6.29nF
Drain to Source Resistance	2.6mOhm
Rds On Max	2 mΩ
Nominal Vgs	2.45 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free